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| 9013 NPN SILICON TRANSISTOR TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 2.BASE W A Tamb=25 3.COLLECTOR 123 -- V ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage -- Collector-emitter breakdown voltage -- Emitter-base breakdown voltage -- Collector cut-off current -- Collector cut-off current -- Emitter cut-off current -- Tamb=25 Symbol unless otherwise specified MIN MAX UNIT Test conditions TYP V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE HFE 1 Ic= 100 A IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 50 mA IC =500 mA 45 25 5 0.1 0.1 0.1 64 40 0.6 1.2 1.4 300 V V V A A A Ic= 0. 1 mA IE= 100 VCB= 40 VCE= 20 VEB= VCE= VCE= 5 A V V V DC current gain(note) 1 V, 1V, 2 Collector-emitter saturation voltage -- Base-emitter saturation voltage -- Base-emitter voltage - - VCE(sat) VBE(sat) VBE IC= 500 mA, IB=50 mA IC= 500mA, IB= 50 mA IE=100mA VCE= 6 V, IC= 20 mA 150 V V V Transition frequency fT E 78-112 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank Range D 64-91 F 96-135 G 112-166 H 144-220 I 190-300 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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